JPH0249025B2 - - Google Patents

Info

Publication number
JPH0249025B2
JPH0249025B2 JP58061067A JP6106783A JPH0249025B2 JP H0249025 B2 JPH0249025 B2 JP H0249025B2 JP 58061067 A JP58061067 A JP 58061067A JP 6106783 A JP6106783 A JP 6106783A JP H0249025 B2 JPH0249025 B2 JP H0249025B2
Authority
JP
Japan
Prior art keywords
region
base
barrier
collector
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58061067A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58186965A (ja
Inventor
Maachin Shanon Jon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS58186965A publication Critical patent/JPS58186965A/ja
Publication of JPH0249025B2 publication Critical patent/JPH0249025B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
JP58061067A 1982-04-08 1983-04-08 トランジスタ Granted JPS58186965A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB08210534A GB2118363A (en) 1982-04-08 1982-04-08 Hot-electron and hot-hole transistors
GB8210534 1982-04-08

Publications (2)

Publication Number Publication Date
JPS58186965A JPS58186965A (ja) 1983-11-01
JPH0249025B2 true JPH0249025B2 (en]) 1990-10-26

Family

ID=10529630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58061067A Granted JPS58186965A (ja) 1982-04-08 1983-04-08 トランジスタ

Country Status (5)

Country Link
US (1) US4566020A (en])
EP (1) EP0091710B1 (en])
JP (1) JPS58186965A (en])
DE (1) DE3380864D1 (en])
GB (1) GB2118363A (en])

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0744182B2 (ja) * 1984-11-09 1995-05-15 株式会社日立製作所 ヘテロ接合バイポ−ラ・トランジスタ
GB2191037A (en) * 1986-05-23 1987-12-02 Philips Electronic Associated Hot charge-carrier transistors
GB2191035A (en) * 1986-05-23 1987-12-02 Philips Electronic Associated Hot charge-carrier transistors
US4901122A (en) * 1987-08-14 1990-02-13 Regents Of The University Of Minnesota Double-base hot carrier transistor
JPH01171269A (ja) * 1987-12-26 1989-07-06 Fujitsu Ltd 半導体装置
US20030087466A1 (en) * 2001-11-06 2003-05-08 Yuqi Wang Phototransistor device
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2056166B (en) * 1979-08-08 1983-09-14 Philips Electronic Associated Hot-electron or hot-hole transistor
JPS5675541A (en) * 1979-11-22 1981-06-22 Sumitomo Light Metal Ind Ltd Copper alloy for water or hot water supply piping material and heat exchanger tube material
US4492971A (en) * 1980-06-05 1985-01-08 At&T Bell Laboratories Metal silicide-silicon heterostructures
US4394673A (en) * 1980-09-29 1983-07-19 International Business Machines Corporation Rare earth silicide Schottky barriers
US4410902A (en) * 1981-03-23 1983-10-18 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier semiconductor device
US4446476A (en) * 1981-06-30 1984-05-01 International Business Machines Corporation Integrated circuit having a sublayer electrical contact and fabrication thereof

Also Published As

Publication number Publication date
EP0091710A3 (en) 1986-10-01
JPS58186965A (ja) 1983-11-01
GB2118363A (en) 1983-10-26
EP0091710A2 (en) 1983-10-19
US4566020A (en) 1986-01-21
DE3380864D1 (en) 1989-12-21
EP0091710B1 (en) 1989-11-15

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